information storage

Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6

Fig. 2 from “Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6” by Xiaolei Wang et al.: Electrical measurements of the AFE CCPS indicating local FE polarization and electrical anisotropy. a Phase vs voltage hysteresis loop of CCPS crystal bulk obtained at T = 2 K by PFM, after subtracting the built-in electric field between the sample and substrate. The upper inset diagram indicates the atomic structure of electric field (E) driven FE polarized state. b The microscope picture of our CCPS device with identified a and b axes, along with the scale-up configuration of electrical measurements on the right. c The rectifying J–V characteristics along the a and b axes as positive +10 V bias is poling for 3 min. d The rectification behaviors as increasing the poling voltage to 6 min or longer. e Time dependence of current density along the a and b axes as setting the poling bias +10 V. f The negative rectification along the a axis as the poling voltage is −10 V for 3 min. g The schematic diagram of physical mechanism illustrating the in-plane electrical anisotropy. NANOSENSORS™ conductive and wear resistant Platinum-Silicide PtSi-FM AFM probes were used for the low-temperature piezoresponse force microscopy.

In the field of modern information storage, the physical properties could act as the storage “medium”, such as electric polarization (dipole orientation) of ferroelectric materials,… Read More »Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6