Tag Archives: PFM

Optical control of polarization in ferroelectric heterostructures

“In the ferroelectric devices, polarization control is usually accomplished by application of an electric field.”* In the article “Optical control of polarization in ferroelectric heterostructures” Tao Li et al. demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode.

NANOSENSORS PPP-EFM PtIr coated AFM probes were used to perform the KPFM and PFM measurements mentioned in the article cited below.

Figure 1 from “Optical control of polarization in ferroelectric heterostructures”: Electrically induced polarization switching in the MoS2/BaTiO3/SrRuO3 junction. a, b PFM phase (a) and amplitude (b) images after application of a negative voltage pulse (−5 V, 0.5 s) to the MoS2 flake. The 12-u.c.-thick BTO film underneath the MoS2 flake is fully switched to the upward polarization, Pup. c, d PFM phase (c) and amplitude (d) images after application of several positive voltage pulses (+5 V, 0.5 s) to the MoS2 flake. BTO underneath the MoS2 flake is fully switched to downward polarization, Pdown. The polarization state of the bare BTO film (at the lower right corner) is not affected by the electrical bias. e, f The I–V characteristics of the same junction measured in the dark and during illumination. The tunneling current for the OFF state (Pup) is largely increased under illumination. Silicon AFM probes with Pt/Ir conductive coating and nominal stiffness of 3 N m−1 (PPP-EFM, NANOSENSORS) were used to perform the KPFM and PFM measurements.
Figure 1 from “Optical control of polarization in ferroelectric heterostructures”:
Electrically induced polarization switching in the MoS2/BaTiO3/SrRuO3 junction. a, b PFM phase (a) and amplitude (b) images after application of a negative voltage pulse (−5 V, 0.5 s) to the MoS2 flake. The 12-u.c.-thick BTO film underneath the MoS2 flake is fully switched to the upward polarization, Pup. c, d PFM phase (c) and amplitude (d) images after application of several positive voltage pulses (+5 V, 0.5 s) to the MoS2 flake. BTO underneath the MoS2 flake is fully switched to downward polarization, Pdown. The polarization state of the bare BTO film (at the lower right corner) is not affected by the electrical bias. e, f The I–V characteristics of the same junction measured in the dark and during illumination. The tunneling current for the OFF state (Pup) is largely increased under illumination

*Tao Li, Alexey Lipatov, Haidong Lu, Hyungwoo Lee, Jung-Woo Lee, Engin Torun, Ludger Wirtz, Chang-Beom Eom, Jorge Íñiguez, Alexander Sinitskii, Alexei Gruverman
Optical control of polarization in ferroelectric heterostructures
Nature Communications, volume 9, Article number: 3344 (2018)
DOI: https://doi.org/10.1038/s41467-018-05640-4

Please follow this external link to read the full article: https://rdcu.be/bdFYw

Open Access:  The article “Optical control of polarization in ferroelectric heterostructures” by Tao Li et. Al. is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

A NANOSENSORS AdvancedTEC ATEC-EFM PtIr coated AFM probe was used for the piezo force microscopy (PFM) characterization in this interesting paper by Borderon et.al Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films published in Nature Communications.

Figure 1 from Borderon et al. Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films: Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm×1 μm for the c-domain ample and 1 μm × 0.5 μm for the a/c-domain sample. PFM characterization done with ATEC-EFM AFM probe
Figure 1 from Borderon et.al Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films: Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm×1
μm for the c-domain ample and 1 μm × 0.5 μm for the a/c-domain sample.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C. Borderon, A. E. Brunier, K. Nadaud, R. Renoud, M. Alexe, H. W. Gundel
Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
Nature Scientific Reports, volume 7, Article number: 3444 (2017)
doi: https://doi.org/10.1038/s41598-017-03757-y

To read the full article please follow this external link: https://rdcu.be/5qTo

Open Access:  The article  Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films  by Borderon et.al is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing,  adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

 

 


		
	

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate

NANOSENSORS PtIr coated PPP-EFM AFM tips were used for the PFM imaging in this interesting paper.

Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces. from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate
Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces.
from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Yogesh Sharma, Radhe Agarwal, Charudatta Phatak, Bumsoo Kim, Seokwoo Jeon, Ram S. Katiyar & Seungbum Hong Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate,
Scientific Reports 7, Article number: 4857 (2017), doi:10.1038/s41598-017-05055-z

Abstract: Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67 Sr0.33 CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.

For the full article please follow this external link: https://www.nature.com/articles/s41598-017-05055-z.epdf

Creative CommonsThe article “Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate” by Yogesh Sharma et. al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/