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AR5-NCH
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AR5-NCH

Cantilever data:
Property Nominal Value Specified Range
Resonance Frequency [kHz] 330 204 - 497
Force Constant [N/m] 42 10 - 130
Length [µm] 125 115 - 135
Mean Width [µm] 30 22.5 - 37.5
Thickness [µm] 4 3 - 5
Order codes and shipping units:
Order Code AFM probes per pack Data sheet
AR5-NCH-10 10 of all probes
AR5-NCH-20 20 of all probes
AR5-NCH-50 50
AR5-NCH-W 370

Special handling information for NANOSENSORS™

Due to their unique geometry the tips of the are more susceptible to tip damage by electrostatic discharge (ESD) than other Silicon-SPM-Probes.

Electric fields near the probe chip may lead to field evaporation which can blunt the tip apex of the probe tip. Therefore the NANOSENSORS™ are shipped in specially designed ESD-safe chip carriers.

NANOSENSORS™ recommends to their customers to take appropriate precautions to avoid tip damage due to electrostatic discharge when handling the probes. This can for example be done by using anti-electrostatic mats, wrist bands and tweezers.

High-aspect-ratio AR5 AFM tip closeup
High-aspect-ratio AR5 AFM tip closeup
NANOSENSORS™ High Aspect Ratio Silicon AFM probes

High Aspect Ratio (> 5:1) - Non-Contact/Tapping Mode - High Resonance Frequency

NANOSENSORS™ AR5-NCH AFM tips are designed for non-contact mode or tapping mode AFM. This AFM probe type combines high operation stability with outstanding sensitivity and fast scanning ability.

For measurements on samples with sidewall angles approaching 90° NANOSENSORS™ produces specially tailored AFM tips. These AFM tips are FIB (Focused Ion Beam) milled to achieve a high aspect ratio portion better than 5:1 at the end of the common silicon AFM tip. This subtractive method of producing the high aspect ratio needle offers the advantage of high lateral stiffness and rigidity of the AFM tip.

The AFM probe offers unique features:

  • length of the high aspect ratio portion of the AFM tip > 2 µm
  • typical aspect ratio at 2 µm in the order of 7:1 (when viewed from side as well as along AFM cantilever axis)
  • half cone angle at 2 µm of the high aspect ratio portion typically < 5°
  • guaranteed AFM tip radius of curvature < 15 nm
  • monolithic AFM tip
  • highly doped silicon to dissipate static charge
  • high mechanical Q-factor for high sensitivity
This AFM probe features alignment grooves on the back side of the holder chip. These grooves fit to the NANOSENSORS Alignment Chip.

How to optimize AFM scanning parameters: list-img

Jeong W, Kim T, Kim Y, Jeong MS, Kim EK
Improved characteristics of MoS2 transistors with selective doping using 1, 2-dichloroethane
Semiconductor Science and Technology. 2023 Jun 5;38(7):075013
DOI: https://doi.org/10.1088/1361-6641/acd808


Chu D, Pak SW, Kim EK
Locally gated SnS2/hBN thin film transistors with a broadband photoresponse
Scientific reports. 2018 Jul 12;8(1):10585
DOI: https://doi.org/10.1038/s41598-018-28765-4


Chu D, Lee YH, Kim EK
Selective control of electron and hole tunneling in 2D assembly
Science advances. 2017 Apr 19;3(4):e1602726
DOI: https://doi.org/10.1126/sciadv.1602726


Qiu D, Lee DU, Lee KS, Pak SW, Kim EK
Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures
Nano Research. 2016 Aug;9(8):2319-26
DOI: https://doi.org/10.1007/s12274-016-1118-6


Qiu D, Lee DU, Park CS, Lee KS, Kim EK
Transport properties of unrestricted carriers in bridge-channel MoS 2 field-effect transistors
Nanoscale. 2015;7(41):17556-62
DOI: https://doi.org/10.1039/C5NR04397B