Tag Archives: PPP-EFM

Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite

NANOSENSORS PPP-EFM AFM tips were used in the research for this article. Have a look at the abstract or follow the external link to the full article.

Figure 1: Crystal structure and domains in boracites. From: Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
Figure 1: Crystal structure and domains in boracites.
From: Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite

Raymond G.P. McQuaid, Michael P. Campbell, Roger W. Whatmore, Amit Kumar, J. Marty Gregg
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite. Nat. Commun. 8, 15105 doi: 10.1038/ncomms15105 (2017).

Abstract:
Ferroelectric domain walls constitute a completely new class of sheet-like functional material. Moreover, since domain walls are generally writable, erasable and mobile, they could be useful in functionally agile devices: for example, creating and moving conducting walls could make or break electrical connections in new forms of reconfigurable nanocircuitry. However, significant challenges exist: site-specific injection and annihilation of planar walls, which show robust conductivity, has not been easy to achieve. Here, we report the observation, mechanical writing and controlled movement of charged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl. Walls are straight, tens of microns long and exist as a consequence of elastic compatibility conditions between specific domain pairs. We show that site-specific injection of conducting walls of up to hundreds of microns in length can be achieved through locally applied point-stress and, once created, that they can be moved and repositioned using applied electric fields.

Please follow this external link for the full article: https://www.nature.com/articles/ncomms15105

Creative Commons BYThe article “Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite” by McQuaid, R. G. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate

NANOSENSORS PtIr coated PPP-EFM AFM tips were used for the PFM imaging in this interesting paper.

Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces. from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate
Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces.
from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Yogesh Sharma, Radhe Agarwal, Charudatta Phatak, Bumsoo Kim, Seokwoo Jeon, Ram S. Katiyar & Seungbum Hong Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate,
Scientific Reports 7, Article number: 4857 (2017), doi:10.1038/s41598-017-05055-z

Abstract: Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67 Sr0.33 CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.

For the full article please follow this external link: https://www.nature.com/articles/s41598-017-05055-z.epdf

Creative CommonsThe article “Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate” by Yogesh Sharma et. al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Hall effect in charged conducting ferroelectric domain walls

In this article the authors demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls.
NANOSENSORS PPP-EFM AFM tips were used for the measurements in this paper.

from: Campbell M. P. et al., Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.
from: Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.

Campbell M. P. et al. Hall effect in charged conducting ferroelectric domain walls. Nat. Commun. 7, 13764 doi: 10.1038/ncomms13764 (2016)

For the full article please follow this external link: https://www.nature.com/articles/ncomms13764

Creative CommonsThe article “Hall effect in charged conducting ferroelectric domain walls”  by Campbell M. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/