Tag Archives: PFM

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate

NANOSENSORS PtIr coated PPP-EFM AFM tips were used for the PFM imaging in this interesting paper.

Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces. from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate
Figure 2: AFM topography images of; (a) 130 nm BFO film grown on NGO and (b) on 100 nm LSCO layered NGO. (c,d) Section analysis along the lines drawn in (c) and (d), respectively, showing the puckering of the surfaces.
from: Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Yogesh Sharma, Radhe Agarwal, Charudatta Phatak, Bumsoo Kim, Seokwoo Jeon, Ram S. Katiyar & Seungbum Hong Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate,
Scientific Reports 7, Article number: 4857 (2017), doi:10.1038/s41598-017-05055-z

Abstract: Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67 Sr0.33 CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.

For the full article please follow this external link: https://www.nature.com/articles/s41598-017-05055-z.epdf

Creative CommonsThe article “Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate” by Yogesh Sharma et. al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Hall effect in charged conducting ferroelectric domain walls

In this article the authors demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls.
NANOSENSORS PPP-EFM AFM tips were used for the measurements in this paper.

from: Campbell M. P. et al., Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.
from: Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.

Campbell M. P. et al. Hall effect in charged conducting ferroelectric domain walls. Nat. Commun. 7, 13764 doi: 10.1038/ncomms13764 (2016)

For the full article please follow this external link: https://www.nature.com/articles/ncomms13764

Creative CommonsThe article “Hall effect in charged conducting ferroelectric domain walls”  by Campbell M. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Rapid mapping of polarization switching through complete information acquisition

A NANOSENSORS PPP-EFM AFM tip was used in the research for this paper.

Nature Comm: GMode makes piezoresponse force microscopy 1000 times faster.

Suhas Somnath,, Alex Belianinov, Sergei V. Kalinin, Stephen Jesse, Rapid mapping of polarization switching through complete information acquisition, Nature Communications (2016), 7, 13290, 2041-1723, DOI: 10.1038/ncomms13290

Congratulations to the authors!
Rapid mapping of polarization switching through complete information acquisition
Rapid mapping of polarization switching through
complete information acquisition