Tag Archives: EFM

Hall effect in charged conducting ferroelectric domain walls

In this article the authors demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls.
NANOSENSORS PPP-EFM AFM tips were used for the measurements in this paper.

from: Campbell M. P. et al., Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.
from: Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.

Campbell M. P. et al. Hall effect in charged conducting ferroelectric domain walls. Nat. Commun. 7, 13764 doi: 10.1038/ncomms13764 (2016)

For the full article please follow this external link: https://www.nature.com/articles/ncomms13764

Creative CommonsThe article “Hall effect in charged conducting ferroelectric domain walls”  by Campbell M. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/