Tag Archives: EFM

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

A NANOSENSORS AdvancedTEC ATEC-EFM PtIr coated AFM probe was used for the piezo force microscopy (PFM) characterization in this interesting paper by Borderon et.al Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films published in Nature Communications.

Figure 1 from Borderon et al. Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films: Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm×1 μm for the c-domain ample and 1 μm × 0.5 μm for the a/c-domain sample. PFM characterization done with ATEC-EFM AFM probe
Figure 1 from Borderon et.al Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films: Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm×1
μm for the c-domain ample and 1 μm × 0.5 μm for the a/c-domain sample.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C. Borderon, A. E. Brunier, K. Nadaud, R. Renoud, M. Alexe, H. W. Gundel
Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
Nature Scientific Reports, volume 7, Article number: 3444 (2017)
doi: https://doi.org/10.1038/s41598-017-03757-y

To read the full article please follow this external link: https://rdcu.be/5qTo

Open Access:  The article  Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films  by Borderon et.al is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing,  adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

 

 


		
	

Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite

NANOSENSORS PPP-EFM AFM tips were used in the research for this article. Have a look at the abstract or follow the external link to the full article.

Figure 1: Crystal structure and domains in boracites. From: Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite
Figure 1: Crystal structure and domains in boracites.
From: Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite

Raymond G.P. McQuaid, Michael P. Campbell, Roger W. Whatmore, Amit Kumar, J. Marty Gregg
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite. Nat. Commun. 8, 15105 doi: 10.1038/ncomms15105 (2017).

Abstract:
Ferroelectric domain walls constitute a completely new class of sheet-like functional material. Moreover, since domain walls are generally writable, erasable and mobile, they could be useful in functionally agile devices: for example, creating and moving conducting walls could make or break electrical connections in new forms of reconfigurable nanocircuitry. However, significant challenges exist: site-specific injection and annihilation of planar walls, which show robust conductivity, has not been easy to achieve. Here, we report the observation, mechanical writing and controlled movement of charged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl. Walls are straight, tens of microns long and exist as a consequence of elastic compatibility conditions between specific domain pairs. We show that site-specific injection of conducting walls of up to hundreds of microns in length can be achieved through locally applied point-stress and, once created, that they can be moved and repositioned using applied electric fields.

Please follow this external link for the full article: https://www.nature.com/articles/ncomms15105

Creative Commons BYThe article “Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite” by McQuaid, R. G. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Hall effect in charged conducting ferroelectric domain walls

In this article the authors demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls.
NANOSENSORS PPP-EFM AFM tips were used for the measurements in this paper.

from: Campbell M. P. et al., Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.
from: Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.

Campbell M. P. et al. Hall effect in charged conducting ferroelectric domain walls. Nat. Commun. 7, 13764 doi: 10.1038/ncomms13764 (2016)

For the full article please follow this external link: https://www.nature.com/articles/ncomms13764

Creative CommonsThe article “Hall effect in charged conducting ferroelectric domain walls”  by Campbell M. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/