Tag Archives: C-AFM

Hall effect in charged conducting ferroelectric domain walls

In this article the authors demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls.
NANOSENSORS PPP-EFM AFM tips were used for the measurements in this paper.

from: Campbell M. P. et al., Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.
from: Hall effect in charged conducting ferroelectric domain walls, Figure 1: Piezoresponse and conductive analysis of domain structure in YbMnO3.

Campbell M. P. et al. Hall effect in charged conducting ferroelectric domain walls. Nat. Commun. 7, 13764 doi: 10.1038/ncomms13764 (2016)

For the full article please follow this external link: https://www.nature.com/articles/ncomms13764

Creative CommonsThe article “Hall effect in charged conducting ferroelectric domain walls”  by Campbell M. P. et al. is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Rapid mapping of polarization switching through complete information acquisition

A NANOSENSORS PPP-EFM AFM tip was used in the research for this paper.

Nature Comm: GMode makes piezoresponse force microscopy 1000 times faster.

Suhas Somnath,, Alex Belianinov, Sergei V. Kalinin, Stephen Jesse, Rapid mapping of polarization switching through complete information acquisition, Nature Communications (2016), 7, 13290, 2041-1723, DOI: 10.1038/ncomms13290

Congratulations to the authors!
Rapid mapping of polarization switching through complete information acquisition
Rapid mapping of polarization switching through
complete information acquisition